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STD35NF06L
N-CHANNEL 60V - 0.014 - 35A DPAK STripFETTM II POWER MOSFET
TYPE STD35NF06L
s s s s
VDSS 60 V
RDS(on) < 0.017
ID 35 A
TYPICAL RDS(on) = 0.014 LOW THRESHOLD DRIVE GATE CHARGE MINIMIZED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 1
DPAK TO-252 (Suffix "T4")
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s DC-AC CONVERTERS s AUTOMOTIVE SWITCHING APPLICATION
Ordering Information
SALES TYPE STD35NF06LT4 MARKING D35NF06L PACKAGE TO-252 PACKAGING TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(*) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 60 60 16 35 24.5 140 80 0.67 5 280 -55 to 175
(1) ISD 35A, di/dt 100A/s, VDD V(BR)DSS, Tj TJMAX (2) Starting T j = 25 oC, ID = 30A, VDD =30V
Unit V V V A A A W W/C V/ns mJ C
(*) Pulse width limited by safe operating area. November 2003
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THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max 1.88 100 275 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 16V Min. 60 1 10 100 Typ. Max. Unit V A A nA
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 17.5 A ID = 17.5 A Min. 1 0.014 0.016 0.017 0.020 Typ. Max. Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 17.5 A Min. Typ. 28 1700 305 105 Max. Unit S pF pF pF
VDS = 25V f = 1 MHz VGS = 0
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID =27.5 A VDD = 30 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD= 48 V ID= 55 A VGS=4.5 V Min. Typ. 20 100 25 5 10 33 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID =27.5 A VDD = 30 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) Min. Typ. 40 20 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
1.5 %.
Test Conditions
Min.
Typ.
Max. 35 140
Unit A A V
ISD = 35 A
VGS = 0 80 200 5
1.5
di/dt = 100A/s ISD = 35 A VDD = 30 V Tj = 150C (see test circuit, Figure 5)
QC
A
ns
(*)Pulsed: Pulse duration = 300 s, duty cycle (*)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
.
.
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A"
B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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*on sales type
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners. (R) 2003 STMicroelectronics - All Rights Reserved
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